Invited Speakers †

Generay Plenary Speaker (ISCS and IPRM) †

C.Y.Chang - National Chiao Tung University, Taiwan.
How We Started Hi-Tech Research and Industries in Taiwan and Booming Now

Plenary Speakers †

Gerhard Abstreiter - Technical University Munich, Germany.

Takashi Mukai - Nichia Corporation, Japan.

Ryne P. Raffaelle - National Renewable Energy Lab, USA.

Invited Speakers †

Kouichi Akahane - NICT, Japan.
Fabrication of ultra-high density InAs quantum dots by strain compensation technique

Hiroshi AMANO - Meijo University, Japan.
Recent developments and future prospects of the fabrication of GaInN-based solar cells

Masahiro Asada - Tokyo Institute of Technology, Japan.
Room-Temperature Oscillation of Resonant Tunneling Diodes in Terahertz Range

Alejandro L. Briseno - University of Massachusetts, USA.
Organic-Inorganic Nanowire Solar Cells

Kevin J. Chen - Hong Kong University ST, China.
Enhancement-mode AlGaN/GaN HEMT Technology

Nicholas Ekins-Daukes - Imperial College London, UK.
High efficiency quantum well solar cells

Yeshaiahu Fainman - University of California San Diego, USA.

Cristian Glattli - CEA Saclay, France.

James S. Harris - Stanford University, USA.

Pham Nam Hai - University of Tokyo, Japan.
Spin motive force and huge magnetoresistance induced by zinc-blende MnAs nanomagnets

Masahiro Hiramoto - Institute for Molecular Science, Japan.
Organic p-i-n Solar Cells Incorporating Seven-nine Purified　Fullerene

Thomas Ihn - ETH Zurich, Switzerland.
Electronic Transport in Graphene Nanostructures

K. Ishibashi and A. Hida - RIKEN, Japan.
Carbon nanotube quantum dots and their molecular scale nanostructures

Gregg Jessen - AFRL, USA.
GaN on diamond devices

Katsumi Kushiya - Showa Shell Sekiyu K.K./Showa Shell Solar K.K., Japan.
Challenges of CIS-based thin-film PV technology towards a gigawatt (GW) production era (tentative)

Konstantinos G. Lagoudakis - Ecole Polytechnique Fédérale de Lausanne, Switzerland.

Stephanie Lacour - Cambridge University, GB.
Organic thin film transistor circuits on elastomeric substrate

Marko Loncar - Harvard University, USA.

Stefan Ludwig - LMU, Munchen, Germany.
Non-Equilibrium Interactions on the Nanoscale: An Electron-Jet Pump Illuminates Back-Action in Quantum Dot Circuits

F. Maccherozzi - Diamond Light Source Ltd, UK.
Site-selective XMCD study of the Fe/(Ga,Mn)As interface

Gerry Mei - Northrop Grumman, USA.
Submillimeter-wave InP HEMT Technology

Michael Mueller - University of Oxford, UK.

Kazuhiro Ohkawa - Tokyo University of Science, Japan.
Hydrogen generation by nitride semiconductors

Alan Seabaugh - University of Notre Dame, USA.
Material comparison for TFETs

Andrei Silov - Eindhoven University of Technology, The Netherlands.

Zlatko Sitar - NCSU, USA.
Challenges in AlN crystal growth and the path to AlN wafers

J. Stangl - University of Linz, Austria.

Jun Takeya - Osaka University, Japan.
Solution-crystalized organic thin-film transistors

K. Vahala - California Institute of Technology, USA.

Robert M. Wallace - University of Texas, USA.
Material integration/characterization on III-V MOSFET

Mingwei Wu - University of Science & Technology of China, China.
Spin Dynamics in Semiconductors from a fully Microscopic Kinetic Spin Bloch Equation Approach